External cavity phase-locked semiconductor tapered lasers

被引:0
作者
Hassiaoui, I. [1 ]
Michel, N. [1 ]
Lecomte, M. [1 ]
Parillaud, O. [1 ]
Calligaro, M. [1 ]
Krakowski, M. [1 ]
Bride, R. Me [3 ]
Bourdet, G. [2 ]
Huignard, J-P. [4 ]
机构
[1] Route Dept 128, Alcatel Thales Lab 3 5, F-91767 Palaiseau, France
[2] Ecole Polytech, CNRS, LULI, CEA UPMC, F-91128 Palaiseau, France
[3] Power Photon, Edinburgh EH14 4AS, Midlothian, Scotland
[4] Thales Res & Technol, F-91767 Palaiseau, France
来源
NOVEL IN-PLANE SEMICONDUCTOR LASERS VII | 2008年 / 6909卷
关键词
D O I
10.1117/12.763398
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work relates to combining a phase corrected array of tapered laser diodes, emitting at lambda = 975 nm, coherently using the Talbot effect. Diffractive coupling of semiconductor lasers by use of the Talbot effect provides a means for coherent beam addition of multiple elements in laser diode arrays and makes possible a very compact external cavity. We have used, in this work, fully index guided tapered laser diodes. They contain a ridge waveguide, which acts as a modal filter, and a tapered section of increasing width, which provides high power. We have realized arrays of several emitters (N=10), which are not optically coupled to each other. First, to improve the beam quality of the array, a phase correcting micro system, achieving collimation in the fast axis, correction of the wave front tilts in both directions and also a slow axis collimation, was added. The FWHM divergences of the array were reduced from 34 degrees to 0.17 degrees in the fast-axis and from 3.5 degrees to 0.7 degrees in the slow-axis at 6A, 3.7 W. Then, to be close to diffraction limit, we have combined this corrected array coherently using the Talbot effect. We have obtained quasi-monolobe slow axis far field profile for the in phase mode with a central peak divergence of only 0.27 degrees at 1.5 A, 315 mW under CW operation and of only 0.20 degrees at 2.5 A, 787 mW under pulsed operation.
引用
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页数:9
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