Compensated Semimetal LaSb with Unsaturated Magnetoresistance

被引:147
作者
Zeng, L. -K. [1 ,2 ]
Lou, R. [3 ,4 ]
Wu, D. -S. [1 ,2 ]
Xu, Q. N. [1 ,2 ]
Guo, P. -J. [3 ,4 ]
Kong, L. -Y. [1 ,2 ]
Zhong, Y. -G. [1 ,2 ]
Ma, J. -Z. [1 ,2 ]
Fu, B. -B. [1 ,2 ]
Richard, P. [1 ,2 ,5 ]
Wang, P. [1 ,2 ]
Liu, G. T. [1 ,2 ]
Lu, L. [1 ,2 ,5 ]
Huang, Y. -B. [6 ]
Fang, C. [1 ,2 ]
Sun, S. -S. [3 ,4 ]
Wang, Q. [3 ,4 ]
Wang, L. [1 ,2 ]
Shi, Y. -G. [1 ,2 ]
Weng, H. M. [1 ,2 ,5 ]
Lei, H. -C. [3 ,4 ]
Liu, K. [3 ,4 ]
Wang, S. -C. [3 ,4 ]
Qian, T. [1 ,2 ,5 ]
Luo, J. -L. [1 ,2 ,5 ]
Ding, H. [1 ,2 ,5 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China
[4] Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China
[5] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China
[6] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China
基金
中国国家自然科学基金;
关键词
GIANT MAGNETORESISTANCE; ANOMALOUS MAGNETORESISTANCE; ULTRAHIGH MOBILITY; BISMUTH; NODE;
D O I
10.1103/PhysRevLett.117.127204
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance(XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center G and one ellipsoidal electron FS at the BZ boundary X. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but shares many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.
引用
收藏
页数:6
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