Electrical properties of bismuth phosphate and bismuth germanate single crystals

被引：15
作者：
Trnovcova, V. [1 ]
Furar, I. [1 ]
Schultze, D. [2 ]
机构：
[1] Slovak Tech Univ Bratislava, Fac Mat Sci & Technol, SK-91724 Trnava, Slovakia
[2] Bundesanstalt F Materialforsch & Prufung, D-12489 Berlin, Germany
来源：
SOLID STATE IONICS | 2008年 / 179卷 / 1-6期
关键词：
Bi5.8PO11.2; Bi4Ge3O12; single crystals; electrical properties; dielectric properties; anisotropy; doping; rare earth ions;
D O I：
10.1016/j.ssi.2007.12.095
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Electrical and dielectric properties, ionic transference numbers, thermal conductivity, and microhardness of Bi5.8PO11.2 (BPO) and Bi4Ge3O12 (BGO) single crystals are studied. Pr3+ and Er3+ are used as dopants in BGO. BPO crystals are mixed electron-ionic conductors (up to 500 degrees C, t(i)=0.14 +/- 0.01). The ionic conductivity, sigma, and relative static permittivity, epsilon(s), are slightly anisotropic, their highest values, sigma=6 exp (-0.64 eV/kT) and epsilon(s)=50 +/- 1, are found along the growth direction [(1) over bar 01]. BGO crystals have a low conductivity (1.5 10(-6) S/cm, at 600 degrees C) of a dominant ionic character (t(i)=0.83 +/- 0.02). Doping with rare earth ions decreases the conductivity significantly. The static relative permittivity of both "pure" and doped BGO is equal to 16.4 +/- 0.1. The thermal conductivity and microhardness of BGO are equal to 4.5 +/- 0.1 W/Km or 5.5 +/- 0.1 kN/mm(2), respectively. A slight impurity hardening takes place. (c) 2008 Published by Elsevier B.V.
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页码：131 / 134
页数：4
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