Crystal growth and ferroelectric properties of BaTiO3 thin films deposited on Si substrate by low energy ion beam assisted deposition technique

被引：0

作者：

Yamamoto, Yasuki ^{[1
]}

Morigo, Yuuji ^{[1
]}

Yokota, Katsuhiro ^{[1
]}

机构：

[1] Kansai Univ, Fac Engn & HRC, Osaka 5658680, Japan

来源：

TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 32, NO 4 | 2007年 / 32卷 / 04期

关键词：

BaTiO3; thin film; IBAD; P-E hysteresis loop; dielectric constant;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

BaTiO3 thin films were deposited on silicon substrates by ionizing oxygen gas in evaporating Ti metals and BaCO3 compounds. BaTiO3 films were deposited after very thin films of TiN were deposited on Si Substrates to prevent the oxidation of Si surfaces. The deposited BaTiO3 thin films had tetragonal (t-) polycrystals oriented to the (101) crystalline plane. A BaTiO3 film deposited using oxygen ion beams with an energy of 100 eV and a current of 0.16 mA/cm(2) had a large saturated polarization value of 39 mu C/cm(2) and a polarization-electric field (P-E) hysteresis loop with a remanent polarization of 7.3 mu C/cm(2) and a coercive field of 102.9 kV/cm. Their remanent polarization values decreased when the energies of oxygen ion beams were increased and decreased from 100 eV.

引用

页码：891 / 894

页数：4

共 20 条

[1] Bistable states of ferroelectric hysteresis loops in a heteroepitaxial BaTiO3 thin film capacitor [J].