Perylene-Diimide Molecules with Cyano Functionalization for Electron-Transporting Transistors

被引:15
作者
Barra, Mario [1 ]
Chiarella, Fabio [1 ]
Chianese, Federico [1 ,2 ]
Vaglio, Ruggero [1 ,2 ]
Cassinese, Antonio [1 ,2 ]
机构
[1] CNR, SPIN, Dipartimento Fis Ettore Pancini, Ple Tecchio,80, I-80125 Naples, Italy
[2] Univ Naples Federico II, Phys Dept Ettore Pancini, Ple Tecchio,80, I-80125 Naples, Italy
关键词
electron-transporting devices; thin film deposition; thin film characterization; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; CHANNEL ORGANIC SEMICONDUCTORS; N-CHANNEL; LOW-VOLTAGE; CHARGE-TRANSPORT; BREAK JUNCTIONS; PERFORMANCE; MOBILITY; PDI8-CN2;
D O I
10.3390/electronics8020249
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Core-cyanated perylene diimide (PDI_CY) derivatives are molecular compounds exhibiting an uncommon combination of appealing properties, including remarkable oxidative stability, high electron affinities, and excellent self-assembling properties. Such features made these compounds the subject of study for several research groups aimed at developing electron-transporting (n-type) devices with superior charge transport performances. After about fifteen years since the first report, field-effect transistors based on PDI_CY thin films are still intensely investigated by the scientific community for the attainment of n-type devices that are able to balance the performances of the best p-type ones. In this review, we summarize the main results achieved by our group in the fabrication and characterization of transistors based on PDI8-CN2 and PDIF-CN2 molecules, undoubtedly the most renowned compounds of the PDI_CY family. Our attention was mainly focused on the electrical properties, both at the micro and nanoscale, of PDI8-CN2 and PDIF-CN2 films deposited using different evaporation techniques. Specific topics, such as the contact resistance phenomenon, the bias stress effect, and the operation in liquid environment, have been also analyzed.
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页数:37
相关论文
共 114 条
[1]   Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors [J].
Ante, Frederik ;
Kaelblein, Daniel ;
Zschieschang, Ute ;
Canzler, Tobias W. ;
Werner, Ansgar ;
Takimiya, Kazuo ;
Ikeda, Masaaki ;
Sekitani, Tsuyoshi ;
Someya, Takao ;
Klauk, Hagen .
SMALL, 2011, 7 (09) :1186-1191
[2]   Surface doping in T6/PDI-8CN2 heterostructures investigated by transport and photoemission measurements [J].
Aversa, L. ;
Verucchi, R. ;
Tatti, R. ;
Di Girolamo, F. V. ;
Barra, M. ;
Ciccullo, F. ;
Cassinese, A. ;
Iannotta, S. .
APPLIED PHYSICS LETTERS, 2012, 101 (23)
[3]   Addressing the use of PDIF-CN2 molecules in the development of n-type organic field-effect transistors for biosensing applications [J].
Barra, M. ;
Viggiano, D. ;
Ambrosino, P. ;
Bloisi, F. ;
Di Girolamo, F. V. ;
Soldovieri, M. V. ;
Taglialatela, M. ;
Cassinese, A. .
BIOCHIMICA ET BIOPHYSICA ACTA-GENERAL SUBJECTS, 2013, 1830 (09) :4365-4373
[4]   Very low bias stress in n-type organic single-crystal transistors [J].
Barra, M. ;
Di Girolamo, F. V. ;
Minder, N. A. ;
Lezama, I. Gutierrez ;
Chen, Z. ;
Facchetti, A. ;
Morpurgo, A. F. ;
Cassinese, A. .
APPLIED PHYSICS LETTERS, 2012, 100 (13)
[5]   Cell viability studies and operation in cellular culture medium of n-type organic field-effect transistors [J].
Barra, M. ;
Viggiano, D. ;
Di Capua, R. ;
Di Girolamo, F. ;
Santoro, F. ;
Taglialatela, M. ;
Cassinese, A. .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (03)
[6]   Transport Property and Charge Trap Comparison for N-Channel Perylene Diimide Transistors with Different Air-Stability [J].
Barra, M. ;
Di Girolamo, F. V. ;
Chiarella, F. ;
Salluzzo, M. ;
Chen, Z. ;
Facchetti, A. ;
Anderson, L. ;
Cassinese, A. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (48) :20387-20393
[7]  
Bateman I.M., 1974, SOLID STATE ELECT, V17, P147, DOI [10.1016/0038-1101(74)90171-3, DOI 10.1016/0038-1101(74)90171-3]
[8]   Real-Time Structural and Optical Study of Growth and Packing Behavior of Perylene Diimide Derivative Thin Films: Influence of Side-Chain Modification [J].
Belova, Valentina ;
Wagner, Benjamin ;
Reisz, Berthold ;
Zeiser, Clemens ;
Duva, Giuliano ;
Rozboril, Jakub ;
Novak, Jiri ;
Gerlach, Alexander ;
Hinderhofer, Alexander ;
Schreibert, Frank .
JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (15) :8589-8601
[9]  
Benfenati V, 2013, NAT MATER, V12, P672, DOI [10.1038/NMAT3630, 10.1038/nmat3630]
[10]   Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods [J].
Benvenuti, Emilia ;
Gentili, Denis ;
Chiarella, Fabio ;
Portone, Alberto ;
Barra, Mario ;
Cecchini, Marco ;
Cappuccino, Chiara ;
Zambianchi, Massimo ;
Lopez, Sergio G. ;
Salzillo, Tommaso ;
Venuti, Elisabetta ;
Cassinese, Antonio ;
Pisignano, Dario ;
Persano, Luana ;
Cavallini, Massimiliano ;
Maini, Lucia ;
Melucci, Manuela ;
Muccini, Michele ;
Toffanin, Stefano .
JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (21) :5601-5608