Organic nonvolatile memory devices with charge trapping multilayer graphene film

被引：74

作者：

Ji, Yongsung ^{[2
]}

Choe, Minhyeok ^{[2
]}

Cho, Byungjin ^{[2
]}

Song, Sunghoon ^{[2
]}

Yoon, Jongwon ^{[2
]}

Ko, Heung Cho ^{[2
]}

Lee, Takhee ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151742, South Korea

[2] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 10期

关键词：

RESISTIVE SWITCHING MEMORIES; TRANSPARENT ELECTRODES; BISTABLE DEVICES; OXIDE; BISTABILITY; FILAMENTARY; PERFORMANCE; INTEGRATION; MECHANISMS; CELLS;

D O I：

10.1088/0957-4484/23/10/105202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10(6)) and a long retention time (over 10(4) s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current-voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism.

引用

页数：6

共 53 条

[1] Polyfluorene as a model system for space-charge-limited conduction [J].

Arif, M. ;

Yun, M. ;

Gangopadhyay, S. ;

Ghosh, K. ;

Fadiga, L. ;

Galbrecht, F. ;

Scherf, U. ;

Guha, S. .

PHYSICAL REVIEW B, 2007, 75 (19)

[2] Organic non-volatile memories from ferroelectric phase-separated blends [J].

Asadi, Kamal ;

De Leeuw, Dago M. ;

De Boer, Bert ;

Blom, Paul W. M. .

NATURE MATERIALS, 2008, 7 (07) :547-550

[3]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[4]

Bai JW, 2010, NAT NANOTECHNOL, V5, P190, DOI [10.1038/NNANO.2010.8, 10.1038/nnano.2010.8]

[5] Organic memory using [6,6]-phenyl-C61 butyric acid methyl ester:: morphology, thickness and concentration dependence studies [J].

Baral, Jayanta K. ;

Majumdar, Himadri S. ;

Laiho, Ari ;

Jiang, Hua ;

Kauppinen, Esko I. ;

Ras, Robin H. A. ;

Ruokolainen, Janne ;

Ikkala, Olli ;

Osterbacka, Ronald .

NANOTECHNOLOGY, 2008, 19 (03)

[6] Properties of ITO on PET film in dependence on the coating conditions and thermal processing [J].

Boehme, M ;

Charton, C .

SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4) :932-935

[7] Mechanism for bistability in organic memory elements [J].

Bozano, LD ;

Kean, BW ;

Deline, VR ;

Salem, JR ;

Scott, JC .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :607-609

[8] The temperature-dependent physical and electrical characteristics of a polymer/RAFT-polymer stabilized nanoparticle system for organic nonvolatile memory [J].

Chen, Jun-Rong ;

Lin, Heng-Tien ;

Hwang, Gue-Wuu ;

Chan, Yi-Jen ;

Li, Pei-Wen .

NANOTECHNOLOGY, 2009, 20 (25)

[9] Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices [J].

Cho, Byungjin ;

Yun, Jin-Mun ;

Song, Sunghoon ;

Ji, Yongsung ;

Kim, Dong-Yu ;

Lee, Takhee .

ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (20) :3976-3981

[10] Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures [J].

Cho, Byungjin ;

Song, Sunghun ;

Ji, Yongsung ;

Kim, Tae-Wook ;

Lee, Takhee .

ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (15) :2806-2829

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