Formation of ytterbium silicide nanowires on Si(001)

被引：14
|
作者：
Kuzmin, M [1 ]
Laukkanen, P [1 ]
Perälä, RE [1 ]
Vaara, RL [1 ]
Väyrynen, IJ [1 ]
机构：
[1] Univ Turku, Dept Phys, FIN-20014 Turku, Finland
来源：
APPLIED SURFACE SCIENCE | 2004年 / 222卷 / 1-4期
关键词：
ytterbium; silicon; silicides; self-assembly; surface structure; morphology; roughness; and topography; scanning tunneling microscopy;
D O I：
10.1016/j.apsusc.2003.09.005
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate ability to form self-assembled nanowires of Yb silicide on Si(0 0 1) by means of solid phase epitaxy. Such nanowires, in contrast to those of other rare earth silicides, are shown to exhibit an unexpectedly wide variety of orientations with respect to the Si substrate. Their spontaneous formation is explained in terms of the hexagonal AlB2 structure of silicon-rich Yb disilicide. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：394 / 398
页数：5
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