Preparation of high-purity chalcogenide glasses containing gallium (III) sulfide

被引：2

作者：

Velmuzhov, A. P. ^{[1
]}

Tyurina, E. A. ^{[1
]}

Sukhanov, M. V. ^{[1
]}

Stepanov, B. S. ^{[1
]}

Ketkova, L. A. ^{[1
]}

Evdokimov, I. I. ^{[1
]}

Kurganova, A. E. ^{[1
]}

Shiryaev, V. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Devyatykh Inst Chem High Pur Subst, 49 Tropinin Str, Nizhnii Novgorod 603951, Russia

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2022年 / 593卷

关键词：

Chalcogenide glasses; Synthesis; Gallium(III) sulfide; Gallium(III) iodide; Impurities; IR optics materials; VAPOR-PRESSURE; BEHAVIOR; FIBERS; HEAT;

D O I：

10.1016/j.jnoncrysol.2022.121786

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A technique for preparation of high-purity Ga-Ge-S and Ga-Sb-S glasses is developed. The method includes two main stages: synthesis of gallium(III) sulfide by interaction of gallium(III) iodide with sulfur in an evacuated silica-glass reactor; synthesis and loading of germanium(II) sulfide and antimony(III) sulfide in the reactor. Thermodynamic modeling of Ge-S and Sb-S systems is carried out. Optimum conditions for the synthesis of germanium and antimony sulfides as components of the chalcogenide charge are theoretically and experimentally determined. High-purity Ga5Ge35S60 and Ga8Sb32S60 glasses with the 0.2-0.6 ppm(at) hydrogen impurity content in the form of SH-groups and heterogeneous micron and submicron-sized impurity inclusions of less than 10(2 )pieces/cm(3) are prepared.

引用

页数：8

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