Toward Ferroelectric Control of Monolayer MoS2

被引:64
作者
Nguyen, Ariana [1 ]
Sharma, Pankaj [2 ]
Scott, Thomas [2 ]
Preciado, Edwin [1 ]
Klee, Velveth [1 ]
Sun, Dezheng [3 ]
Lu, I-Hsi [1 ]
Barroso, David [1 ]
Kim, SukHyun [3 ]
Shur, Vladimir Ya [4 ]
Akhmatkhanov, Andrey R. [4 ]
Gruverman, Alexei [2 ]
Bartels, Ludwig [1 ]
Dowben, Peter A. [2 ]
机构
[1] Univ Calif Riverside, Chem & Mat Sci & Engn Program, Riverside, CA 92521 USA
[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[3] Columbia Univ, New York, NY 10027 USA
[4] Ural Fed Univ, Inst Nat Sci, Ekaterinburg 620000, Russia
基金
美国国家科学基金会; 俄罗斯科学基金会;
关键词
CVD growth on oxides; selective area growth; transition metal dichalcogenides on ferroelectrics; ferroelectric surface polarization; HIGH-QUALITY MONOLAYER; FORCE MICROSCOPY; MOLYBDENUM-DISULFIDE; FIELD; TRANSISTORS; NANOSCALE; LINBO3; POLARIZATION; UNIFORM; GROWTH;
D O I
10.1021/acs.nanolett.5b00687
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface So that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the "up" domains, while slightly,quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on he domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility, for ferroelectric nonvolatile gating of transition Metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.
引用
收藏
页码:3364 / 3369
页数:6
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