Metal contact to graphene nanoribbon

被引：7

作者：

Seol, Gyungseon ^{[1
]}

Guo, Jing ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

关键词：

contact resistance; graphene; metal-insulator boundaries; nanoribbons; numerical analysis; ohmic contacts; Schottky barriers; work function;

D O I：

10.1063/1.3682319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal to graphene nanoribbon (GNR) contact is explored by self-consistent numerical simulations. The Schottky barrier height of the GNR contact can be modulated by either the gate voltage or the workfunction of the metal contact. An Ohmic contact with multiple-subband injection can be achieved with increase of the GNR width. The contact resistance normalized by the GNR width is smaller than that of the two-dimensional graphene, and the effect of the quasi-one-dimensional subbands for GNRs is manifested when the GNR is narrower than about 5 nm. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682319]

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