Thin active region HgCdTe-based quantum cascade laser with quasi-relativistic dispersion law

被引:4
作者
Dubinov, A. A. [1 ]
Ushakov, D., V [2 ]
Afonenko, A. A. [2 ]
Khabibullin, R. A. [3 ,4 ]
Fadeev, M. A. [1 ]
Morozov, S., V [1 ]
机构
[1] Russian Acad Sci, Inst Phys Microstruct, GSP 105, Nizhnii Novgorod 603950, Russia
[2] Belarusian State Univ, 4 Nezavisimosti Ave, Minsk 220030, BELARUS
[3] VG Mokerov Inst Ultrahigh Frequency Semicond Elec, 7-5 Nagornyy Proezd, Moscow 117105, Russia
[4] Moscow Inst Phys & Technol, 9 Inst Sky Lane, Dolgoprudnyi 141701, Russia
关键词
THZ; SPECTRA;
D O I
10.1364/OL.470688
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
HgCdTe is promising as a material to solve a problem of the development of semiconductor sources with an operational frequency range of 6-10 THz due to the small optical phonon energies and electron effective mass. In this study, we calculate the dependence of the metal-metal waveguide characteristics on the number of cascades for the 3-well design HgCdTe-based quantum cascade laser at 8.3 THz. It is shown that four cascades are sufficient for lasing at a lattice temperature of 80 K due to the large gain in the active medium. The results of this study provide a way to simplify the fabrication of thin active region HgCdTe-based quantum cascade lasers for operation in the range of the GaAs phonon Reststrahlen band inaccessible to existing quantum cascade lasers. (C) 2022 Optica Publishing Group
引用
收藏
页码:5048 / 5051
页数:4
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