Band alignment and interfacial properties of atomic layer deposited (TiO2) x (Al2O3)1-x gate dielectrics on Ge

被引：8

作者：

Li, Xue-Fei ^{[1
]}

Fu, Ying-Ying ^{[1
]}

Liu, Xiao-Jie ^{[1
]}

Li, Ai-Dong ^{[1
]}

Li, Hui ^{[1
]}

Wu, Di ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Mat Sci & Engn Dept, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 105卷 / 03期

关键词：

DEVICES; HFO2; SI;

D O I：

10.1007/s00339-011-6511-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(TiO2) (x) (Al2O3)(1-x) (x=0.7,0.8,0.9) gate dielectrics were deposited on Ge by atomic layer deposition using trimethylaluminium and Ti isopropoxide. The interfacial properties and band alignment were investigated by means of transmission electron microscopy (TEM) and X-ray photoemission spectroscopy. High-resolution TEM results show that the (TiO2)(0.8)(Al2O3)(0.2) film annealed at 500A degrees C is amorphous with sharp interface between (TiO2)(0.8)(Al2O3)(0.2) and Ge. The conduction-band offsets are enhanced from 1.04 to 1.40 eV with increasing Al content. Capacitance equivalent thickness of 15.8 for (TiO2)(0.9)(Al2O3)(0.1) gate dielectrics is achieved with a gate leakage current of 2.70x10(-5) A/cm(2) at V (g)=+1 V.

引用

页码：763 / 767

页数：5

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