High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers

被引：9

作者：

Akbar, Jehan ^{[1
]}

Hou, Lianping ^{[1
]}

Haji, Mohsin ^{[1
]}

Strain, Michael J. ^{[1
]}

Marsh, John H. ^{[1
]}

Bryce, A. Catrina ^{[1
]}

Kelly, Anthony E. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

OPTICS LETTERS | 2012年 / 37卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

CAVITY SEMICONDUCTOR-LASER; LOW-JITTER;

D O I：

10.1364/OL.37.000344

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High output power 40 GHz 1.55 mu m passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W. (C) 2012 Optical Society of America

引用

页码：344 / 346

页数：3

共 14 条

[1] 2.1-W picosecond passively mode-locked external-cavity semiconductor laser [J].

Aschwanden, A ;

Lorenser, D ;

Unold, HJ ;

Paschotta, R ;

Gini, E ;

Keller, U .

OPTICS LETTERS, 2005, 30 (03) :272-274

[2] Monolithic and multi-GigaHertz mode-locked semiconductor lasers: Constructions, experiments, models and applications [J].

Avrutin, EA ;

Marsh, JH ;

Portnoi, EL .

IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (04) :251-278

[3]

Connelly M.J., 2002, SEMICONDUCTOR OPTICA

[4] SHORT PULSE GENERATION USING MULTISEGMENT MODE-LOCKED SEMICONDUCTOR-LASERS [J].

DERICKSON, DJ ;

HELKEY, RJ ;

MAR, A ;

KARIN, JR ;

WASSERBAUER, JG ;

BOWERS, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2186-2202

[5] High-power mode-locked external cavity semiconductor laser using inverse bow-tie semiconductor optical amplifiers [J].

Gee, S ;

Alphonse, G ;

Connolly, J ;

Delfyett, PJ .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (02) :209-215

[6] Fast saturable absorption and 10 GHz wavelength conversion in Al-quaternary multiple quantum wells [J].

Green, Richard P. ;

Haji, Mohsin ;

Hou, Lianping ;

Mezosi, Gabor ;

Dylewicz, Rafal ;

Kelly, Anthony E. .

OPTICS EXPRESS, 2011, 19 (10) :9737-9743

[7] Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers [J].

Hou, Lianping ;

Haji, Mohsin ;

Akbar, Jehan ;

Qiu, Bocang ;

Bryce, A. Catrina .

OPTICS LETTERS, 2011, 36 (06) :966-968

[8] Monolithic mode-locked laser and optical amplifier for regenerative pulsed optical clock recovery [J].

Koch, Brian R. ;

Barton, Jonathan S. ;

Masanovic, Milan ;

Hu, Zhaoyang ;

Bowers, John E. ;

Blumenthal, Daniel J. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (9-12) :641-643

[9] MODE-LOCKED MULTISEGMENT RESONANT-OPTICAL-WAVE-GUIDE DIODE LASER ARRAYS [J].

MAR, A ;

HELKEY, R ;

REYNOLDS, T ;

BOWERS, J ;

BOTEZ, D ;

ZMUDZINSKI, C ;

TU, C ;

MAWST, L .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (12) :1355-1359

[10] Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser [J].

Merghem, K. ;

Akrout, A. ;

Martinez, A. ;

Moreau, G. ;

Tourrenc, J. -P. ;

Lelarge, F. ;

Van Dijk, F. ;

Duan, G. -H. ;

Aubin, G. ;

Ramdane, A. .

OPTICS EXPRESS, 2008, 16 (14) :10675-10683

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