Effect of substrate orientation on defect generation and annealing behaviour in carbon implanted silicon

Nanometric amorphous SiCx precipitates selforganized in a periodic array are observed to form during high-dose carbon implantation in Si(111). The interaction of silicon selfinterstitials (Si-I) emitted from these precipitates with extended defects formed in the near-surface layers is studied by RBS/channeling and cross-sectional TEM. It is shown that at an implantation temperature of 150 degreesC the dominant defect species in this zone depends on the wafer crystal orientation: (111) extrinsic stacking faults in Si(111), while it is point defect like in Si(100). Trapping of Sit in (111) stacking faults hinders thermal crystallization of SiCx precipitates at 900 degreesC. (C) 2003 Elsevier B.V. All rights reserved.