Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

被引：38

作者：

Jung, Helmut ^{[1
]}

Behtash, Reza ^{[1
]}

Thorpe, James R. ^{[1
]}

Riepe, Klaus ^{[1
]}

Bourgeois, Franck ^{[1
]}

Blanck, Herve ^{[1
]}

Chuvilin, Andrey ^{[2
]}

Kaiser, Ute ^{[2
]}

机构：

[1] United Monolith Semicond GmbH, Wilhelm Runge Str 11, D-89081 Ulm, Germany

[2] Univ Ulm, Materialwissenschaftliche Elektronenmikroskopie, Ulm 89069, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

ALGAN/GAN; TRANSISTORS; CONTACTS;

D O I：

10.1002/pssc.200880819

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The Schottky contact on GaN HEMT power devices is a key element for high power performance and its long term reliability behavior. Up to now such GaN devices are still suffering very often by a leakage current increase during operation resulting in deteriorated transistor behavior. One reason for this problem is owing to insufficiently stable Schottky contacts based on NiAu metalisation. We analysed GaN HEMTs with different aging behaviors by means of HR-TEM and EDX investigations. It could be shown that on transistors with increasing leakage current Au was found directly on the Schottky interface which may be responsible for the increase of the leakage current. Furthermore, there are strong indications that such Au is diffusing via the gate foot side wall Ni-SiN interface towards the Schottky barrier. It is proposed that an additional metallic diffusion barrier may solve this aging problem. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S976 / S979

页数：4

共 8 条

[1] Development of millimeter-wave GaNHFET technology [J].

Higashiwaki, M. ;

Mimura, T. ;

Matsui, T. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :2042-2048

[2] Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications [J].

Koyama, Y ;

Hashizume, T ;

Hasegawa, H .

SOLID-STATE ELECTRONICS, 1999, 43 (08) :1483-1488

[3]

MISHRA U, 2006, IWN2006 KYOT JAP

[4]

Mitani E, 2007, CS MANTECH C MAY 14, P213

[5] Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal [J].

Miura, N ;

Nanjo, T ;

Suita, M ;

Oishi, T ;

Abe, Y ;

Ozeki, T ;

Ishikawa, H ;

Egawa, T ;

Jimbo, T .

SOLID-STATE ELECTRONICS, 2004, 48 (05) :689-695

[6]

NISHIDA T, 2007, 7 TWHM 2007 CHIB JAP, P83

[7] Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors [J].

Tan, WS ;

Houston, PA ;

Parbrook, PJ ;

Wood, DA ;

Hill, G ;

Whitehouse, CR .

APPLIED PHYSICS LETTERS, 2002, 80 (17) :3207-3209

[8] Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors [J].

Vitusevich, SA ;

Danylyuk, SV ;

Klein, N ;

Petrychuk, MV ;

Sokolov, VN ;

Kochelap, VA ;

Belyaev, AE ;

Tilak, V ;

Smart, J ;

Vertiatchikh, A ;

Eastman, LF .

APPLIED PHYSICS LETTERS, 2002, 80 (12) :2126-2128

← 1 →