Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

被引：28

作者：

Zhou, Xilin ^{[1
,2
,3
]}

Wu, Liangcai ^{[1
,2
]}

Song, Zhitang ^{[1
,2
]}

Rao, Feng ^{[1
,2
]}

Cheng, Yan ^{[1
,2
]}

Peng, Cheng ^{[1
,2
]}

Yao, Dongning ^{[1
,2
]}

Song, Sannian ^{[1
,2
]}

Liu, Bo ^{[1
,2
]}

Feng, Songlin ^{[1
,2
]}

Chen, Bomy ^{[4
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Nanotechnol Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[3] Chinese Acad Sci, Grad Univ, Beijing 100080, Peoples R China

[4] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 03期

基金：

中国国家自然科学基金;

关键词：

CHANGE MEMORY; FILM;

D O I：

10.1063/1.3614553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The phase change memory with monolayer chalcogenide film (Si18Sb52Te30) is investigated for the feasibility of multilevel data storage. During the annealing of the film, a relatively stable intermediate resistance can be obtained at an appropriate heating rate. The transmission electron microscopy in situ analysis reveals a conversion of crystallization mechanism from nucleation to crystal growth, which leads a continuous reduction in the degree of disorder. It is indicated from the electrical properties of the devices that the fall edge of the voltage pulse is the critical factor that determines a reliable triple-level resistance state of the phase change memory cell. (C) 2011 American Institute of Physics. [doi :10.1063/1.3614553]

引用

页数：3

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