Improvement of electrical property for Pb(Zr0.53Ti0.47)O3 ferroelectric thin film deposited by sol-gel method on SRO electrode

被引：2

作者：

Vu Ngoc Hung ^{[1
]}

Le Van Minh ^{[1
]}

Bui Thi Huyen ^{[1
]}

Nguyen Duc Minh ^{[1
]}

机构：

[1] Hanoi Univ Technol, ITIMS, Hanoi, Vietnam

来源：

APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08) | 2009年 / 187卷

关键词：

Ferroelectric thin film; SRO-electrode; sol-gel method; PZT;

D O I：

10.1088/1742-6596/187/1/012063

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pb(Zr,Ti)O-3 thin films with Zr/Ti ratio of 53:47 were deposited on SRO/YSZ/Si(100) and Pt/Ti/SiO2/Si(100) substrates using the sol-gel method. The thermal process of the PZT thin films included treating two-step pyrolysis, at 300 degrees C for 30 minutes and 400 degrees C for 10 minutes, and annealing crystallization, at 600 degrees C for 10 minutes in air ambient. The remnant polarization and the coercive field of the PZT/SRO/YSZ/Si were 28 mu C/cm(2) and 65 kV/cm(2), and those of the PZT/Pt/Ti/SiO2/Si were 12 mu C/cm(2) and 79 kV/cm(2). This indicates that the use of the metallic SRO-electrodes significantly improves electrical property of PZT piezoelectric thin film as compared with a metal-electrode Pt.

引用

页数：6

共 6 条

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