Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

被引：31

作者：

Chen, Z. Q. ^{[1
]}

Betsuyaku, K. ^{[2
]}

Kawasuso, A. ^{[3
]}

机构：

[1] Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China

[2] Mizuho Informat & Res Inst Inc, Sci Solut Div, Chiyoda Ku, Tokyo 1018443, Japan

[3] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki, Gunma 3701292, Japan

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.77.113204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies (V-Zn) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200 degrees C. The further annealing at 400 degrees C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisitcs (V-Zn-ZnO).

引用

页数：4

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