He-3 impurity effects on the growth kinetics of He-4 crystals

We report on the growth kinetics of He-4 crystals with a small amount of He-3 impurities around 0.8K. The growth resistance was measured using the response of the charged liquid-solid interface with respect to an externally applied voltage. In 5ppm and 10ppm He-3 mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure He-4 and does not have a strong He-3 concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as for pure He-4. We discuss several possible explanations of the present experiment.