He-3 impurity effects on the growth kinetics of He-4 crystals

被引：0
|
作者：
Suzuki, M [1 ]
Thiel, M [1 ]
Leiderer, P [1 ]
机构：
[1] UNIV ELECTROCOMMUN,DIV NAT SCI,CHOFU,TOKYO 182,JAPAN
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷
关键词：
D O I：
10.1007/BF02569645
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on the growth kinetics of He-4 crystals with a small amount of He-3 impurities around 0.8K. The growth resistance was measured using the response of the charged liquid-solid interface with respect to an externally applied voltage. In 5ppm and 10ppm He-3 mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure He-4 and does not have a strong He-3 concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as for pure He-4. We discuss several possible explanations of the present experiment.
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收藏
页码：459 / 460
页数：2
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