How grain boundaries in Cu(In,Ga)Se2 thin films are charged: Revisit

被引：37

作者：

Jiang, C. -S. ^{[1
]}

Contreras, M. A. ^{[1
]}

Repins, I. ^{[1
]}

Moutinho, H. R. ^{[1
]}

Yan, Y. ^{[2
]}

Romero, M. J. ^{[1
]}

Mansfield, L. M. ^{[1
]}

Noufi, R. ^{[1
]}

Al-Jassim, M. M. ^{[1
]}

机构：

[1] NREL, Golden, CO 80401 USA

[2] Univ Toledo, Dept Phys, Toledo, OH 43606 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

SOLAR-CELLS; MICROSCOPY;

D O I：

10.1063/1.4737406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Potential measurements on Cu(In,Ga)Se-2 thin films using scanning Kelvin probe force microscopy have been reported extensively to address grain-boundary (GB) recombination by examining GB charging. However, the results are highly inconsistent. We revisit this issue by measuring high-and low-quality wide-bandgap films and using a complementary method of scanning capacitance microscopy. Our results show consistent positively charged GBs in our high-quality films with minimal surface defects, except for the Sigma 3[112] GBs, which are charge neutral. We discuss possible artifacts due to surface defects when examining the GB charging and the role of GBs in the device performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737406]

引用

页数：4

共 16 条

[1]

Abou-Ras D., 2010, P 35 IEEE PVSC C IEE, P418

[2] Symmetry-dependence of electronic grain boundary properties in polycrystalline CuInSe2 thin films [J].