Role of the Growth Temperature in MoS2 Growth by Chemical Vapor Deposition

被引：3

作者：

Kim, Min-Woo ^{[1
]}

Kim, Ja-Yeon ^{[2
]}

Cho, Yoo-Hyun ^{[1
,2
]}

Park, Hyun-Sun ^{[1
,2
]}

Kwon, Min-Ki ^{[1
]}

机构：

[1] Chosun Univ, Dept Photon Engn, Gwang Ju 501759, South Korea

[2] Korea Photon Technol Inst KOPTI, Micro LED Team, Gwang Ju 500779, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2018年 / 18卷 / 03期

关键词：

MoS2; Molybdenum Disulfide; CVD; Two-Dimensional Materials; TMDC; MONOLAYER MOS2; ATOMIC LAYERS; PHOTOLUMINESCENCE;

D O I：

10.1166/jnn.2018.14982

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper, we discuss the effect of synthesis temperature on the lateral growth of MoS2 thin films in chemical vapor deposition. With increasing temperature, surface coverage with MoS2 triangular islands is significantly improved due to an increase in the density of nuclei and fully continuous MoS2 thin film is grown when the growth temperature reached 800 degrees C. The MoS2 triangular islands grown at the temperature from 650 to 750 degrees C are monolayer and highly crystalline, whereas the large-area continuous film grown at the temperature of 800 degrees C is composed of double-layer or overlapping MoS2 nanosheets. Our research provides that synthesis temperature is the key to growth large area and high quality single crystal MoS2 films.

引用

页码：2140 / 2143

页数：4

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