Aging-induced domain memory in acceptor-doped perovskite ferroelectrics associated with ferroelectric-ferroelectric transition cycle

被引：8

作者：

Gao, Jing-Hui ^{[1
,4
]}

Xue, Dezhen ^{[1
,2
,3
,4
]}

Zhang, Lixue ^{[1
,2
,3
]}

Wang, Yu ^{[1
,2
,3
]}

Bao, Huixin ^{[1
,2
,3
]}

Zhou, Chao ^{[1
]}

Liu, Wenfeng ^{[1
]}

Chen, Wei ^{[1
]}

Ren, Xiaobing ^{[1
,4
]}

机构：

[1] Xi An Jiao Tong Univ, Multidisciplinary Mat Res Ctr, Frontier Inst Sci & Technol, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China

[3] Xi An Jiao Tong Univ, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Xian 710049, Peoples R China

[4] Natl Inst Mat Sci, Ferro Phys Grp, Tsukuba, Ibaraki 3050047, Japan

来源：

EPL | 2011年 / 96卷 / 03期

基金：

中国国家自然科学基金;

关键词：

CRYSTALS; CERAMICS; WALLS;

D O I：

10.1209/0295-5075/96/37001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Perovskite ferroelectrics naturally exhibit multiple energetically equivalent domain states; thus, a certain domain state or a certain domain pattern is not expected to reappear once it is disturbed by a phase transition; i.e., there should exist no "domain memory". This letter, however, provides direct evidence with in situ optical microscopy for a domain memory effect in an aged K+-doped BaTiO3 single crystal during a ferroelectric-ferroelectric transition cycle between tetragonal and orthorhombic phase. By contrast, the domain memory effect is absent in an unaged sample. These results suggest that the domain memory effect is associated with point defect migration during aging. Our findings can be explained by a symmetry-conforming tendency of point defects. Copyright (C) EPLA, 2011

引用

页数：5

共 31 条

[1] THE ROLE OF DOMAIN-WALLS ON THE DIELECTRIC, ELASTIC AND PIEZOELECTRIC PROPERTIES OF FERROELECTRIC CERAMICS [J].