Ferroelectricity in ultrathin perovskite films

被引：258

作者：

Sai, N ^{[1
]}

Kolpak, AM ^{[1
]}

Rappe, AM ^{[1
]}

机构：

[1] Univ Penn, Dept Chem, Makineni Theoret Labs, Philadelphia, PA 19104 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.72.020101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report studies of ferroelectricity in ultrathin perovskite films with realistic electrodes. The results reveal stable ferroelectric states in thin films less than 10 A thick with polarization normal to the surface. Under short-circuit boundary conditions, the screening effect of realistic electrodes and the influence of real metal-oxide interfaces on thin film polarization are investigated. Our studies indicate that metallic screening from the electrodes is affected by the difference in work functions at oxide surfaces. We demonstrate this effect in ferroelectric PbTiO3 and BaTiO3 films.

引用

页数：4

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