Influence of defects and interface on radiative transition of Ge

被引：19

作者：

Jan, S. -R. ^{[1
]}

Chen, C. -Y. ^{[1
]}

Lee, C. -H. ^{[1
]}

Chan, S. -T. ^{[2
]}

Peng, K. -L. ^{[2
]}

Liu, C. W. ^{[1
,2
,3
]}

Yamamoto, Y. ^{[4
]}

Tillack, B. ^{[4
,5
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Dept Elect Engn, Taipei 106, Taiwan

[3] Nat Nano Device Lab, Hsinchu 30078, Taiwan

[4] Innovat High Performance Microelect, D-15236 Frankfurt, Oder, Germany

[5] Tech Univ Berlin, D-10587 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 14期

关键词：

SILICON TUNNELING DIODES; ROOM-TEMPERATURE; ELECTROLUMINESCENCE; GERMANIUM;

D O I：

10.1063/1.3571439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influences of defects and surface roughness on the indirect bandgap radiative transition of Ge were studied. Bulk Ge has 15 times the integrated intensity of photoluminescence of Ge-on-Si. However, for Ge-on-Si sample, the direct transition related photoluminescence intensity is higher than the indirect transition related one. We affirm that the defects in the Ge-on-Si are responsible for the weak indirect transition and relatively strong direct transition. The scattering of electrons by roughness at Ge/oxide interface can provide extra momentum of the indirect band transition of Ge, and thus enhance the indirect radiative transition. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3571439]

引用

页数：3

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