Current instabilities in GaN-based devices

被引:130
作者
Daumiller, I [1 ]
Theron, D
Gaquière, C
Vescan, A
Dietrich, R
Wieszt, A
Leier, H
Vetury, R
Mishra, UK
Smorchkova, IP
Keller, S
Nguyen, NX
Nguyen, C
Kohn, E
机构
[1] Univ Ulm, Dept Electron Devices & Circuit, D-89069 Ulm, Germany
[2] IEMN, UMR CNRS 8520, F-59652 Villeneuve Dascq, France
[3] Daimler Chrysler AG, Res & Technol, D-89013 Ulm, Germany
[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[5] HRL Labs, LLC, Malibu, CA 90265 USA
关键词
AlGaN/GaN heterostructure FETs; current dispersion;
D O I
10.1109/55.902832
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Current dispersion effects have been experimentally investigated in a variety, of AlGaN/GaN heterostructure FETs with large signal and switching measurements including HEMTs with doped and undoped barrier layer, A range of dispersion frequencies from 10(-3) Hz to 10 GHz were observed, where the output current amplitude is drastically reduced. Through this effect the full channel charge of AlGaN/GaN heterostructure FET may be completely depleted under specific bias conditions. This indicates that this phenomena cannot be related to deep traps alone, hut is also connected to piezo related charge states and conduction to these states.
引用
收藏
页码:62 / 64
页数:3
相关论文
共 11 条
[1]  
DAUMILLER I, 1999, 23 EUR WORKSH COMP S, P26
[2]  
Dietrich R, 1999, PHYS STATUS SOLIDI A, V176, P209, DOI 10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO
[3]  
2-Q
[4]  
GREEN BM, 2000, IEEE ELECT DEVICE LE, V21
[5]   Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors [J].
Klein, PB ;
Freitas, JA ;
Binari, SC ;
Wickenden, AE .
APPLIED PHYSICS LETTERS, 1999, 75 (25) :4016-4018
[6]   Large signal frequency dispersion of AlGaN GaN heterostructure field effect transistors [J].
Kohn, E ;
Daumiller, I ;
Schmid, P ;
Nguyen, NX ;
Nguyen, CN .
ELECTRONICS LETTERS, 1999, 35 (12) :1022-1024
[7]   Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies [J].
Nguyen, C ;
Nguyen, NX ;
Grider, DE .
ELECTRONICS LETTERS, 1999, 35 (16) :1380-1382
[8]   High performance GaN/AlGaN MODFETs grown by RF-assisted MBE [J].
Nguyen, C ;
Nguyen, NX ;
Le, M ;
Grider, DE .
ELECTRONICS LETTERS, 1998, 34 (03) :309-311
[9]   Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy [J].
Smorchkova, IP ;
Elsass, CR ;
Ibbetson, JP ;
Vetury, R ;
Heying, B ;
Fini, P ;
Haus, E ;
DenBaars, SP ;
Speck, JS ;
Mishra, UK .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4520-4526
[10]   Trap effects studies in GaN MESFETs by pulsed measurements [J].
Trassaert, S ;
Boudart, B ;
Gaquière, C ;
Théron, D ;
Crosnier, Y ;
Huet, F ;
Poisson, MA .
ELECTRONICS LETTERS, 1999, 35 (16) :1386-1388