Structural and thermoelectric properties of Ag-doped Bi2(Te0.95Se0.05)3 thin films prepared by flash evaporation

Ag-doped Bi-2(Te0.95Se0.05) 3 thermoelectric thin films (Ag: 0-0.5 wt%) with thickness of 800 nm have been deposited on glass substrates by the flash evaporation method at 473 K. The structure and morphology of the thin films were analysed by x-ray diffraction and field emission scanning electron microscopy, respectively. The effects of Ag doping concentration on the thermoelectric properties of the annealed thin films were investigated by room-temperature measurement of the Seebeck coefficient and electrical resistivity. The thermoelectric power factor was enhanced to 16.1 Wcm(-1) K-2 at 0.2 wt% Ag doping. The Seebeck coefficients are positive with increasing Ag doping concentration from 0.25 to 0.5 wt%. And the thin films show p-type conduction.