A New Curvature-corrected CMOS Bandgap Voltage Reference Using Current Sink Technique

被引：0

作者：

Rhaffor, Nuha A. ^{[1
]}

Zawawi, Ruhaifi Abdullah ^{[1
]}

Mohd, Shukri Korakkottil Kunhi ^{[1
]}

Hamid, Sofiyah Sal ^{[1
]}

Abd Manaf, Asrulnizam ^{[1
]}

机构：

[1] Univ Sains Malaysia, Collaborat Microelect Design Excellence Ctr, George Town, Malaysia

来源：

PROCEEDINGS OF 2017 INTERNATIONAL CONFERENCE ON IMAGING, SIGNAL PROCESSING AND COMMUNICATION | 2015年

关键词：

CMOS band-gap reference; curvature-corrected; current sink;

D O I：

10.1145/3132300.3132334

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a new CMOS Bandgap Voltage Reference (BGR). The proposed circuit consists of first-order BGR and a curvature correction circuit utilizing current sink technique to compensate for the voltage reference in a wide temperature range. With a supply voltage of 2.5 V, the simulated result shows the temperature coefficient of 2.75 ppm/degrees C is achieved over a temperature range of -25 degrees to 140 degrees C. The proposed circuit is realized in Silterra 0.13 mu m CMOS technology.

引用

页码：176 / 179

页数：4

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