Nanoscale Manipulation for The Fabrication of Field-emission Air-channel Transistors

被引：0
|
作者：
Liu, Meng [1 ]
Lei, Yu [1 ]
Li, Tie [1 ]
Wang, Yuelin [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, Shanghai 200050, Peoples R China
来源：
2019 IEEE 19TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO 2019) | 2019年
关键词：
Field emission; air channel transistor; nanoscale manipulation; nanowires;
D O I：
10.1109/nano46743.2019.8993909
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method based on nanoscale manipulation and focused ion beam etching is put forward for the fabrication of nanoscale field emission transistors with air channels. Using this method, the shape and size of the emitter is controllable with nanoscale precision. Material compatibility of the method is demonstrated with SiC, VO2, Ge and Cu. Low voltage field-emission behaviors and air-channel transistor characteristics are also demonstrated with an obvious forward-directional capability.
引用
收藏
页码：459 / 462
页数：4
相关论文
共 31 条
  • [1] Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors
    Nirantar, Shruti
    Ahmed, Taimur
    Ren, Guanghui
    Gutruf, Philipp
    Xu, Chengong
    Bhaskaran, Madhu
    Walia, Sumeet
    Sriram, Sharath
    2019 INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC), 2019,
  • [2] Metal-Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics
    Nirantar, Shruti
    Ahmed, Taimur
    Ren, Guanghui
    Gutruf, Philipp
    Xu, Chenglong
    Bhaskaran, Madhu
    Walia, Sumeet
    Sriram, Sharath
    NANO LETTERS, 2018, 18 (12) : 7478 - 7484
  • [3] Vertical Field Emission Air-Channel Diodes and Transistors
    Chang, Wen-Teng
    Hsu, Hsu-Jung
    Pao, Po-Heng
    MICROMACHINES, 2019, 10 (12)
  • [4] Evaluation of the Field-Emission Characteristics of the Different Types of Triode Structure with the Nanoscale Vacuum Channel
    Djuzhev, Nikolay A.
    Makhiboroda, Maksim A.
    Gryazneva, Tatiana A.
    Agarkov, Evgeniy A.
    Kireev, Valeriy Y.
    PROCEEDINGS OF THE 2017 IEEE RUSSIA SECTION YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING CONFERENCE (2017 ELCONRUS), 2017, : 1381 - 1384
  • [5] Reducing the gate current in vacuum channel field-emission transistors using a finger gate
    Kohani Khoshkbijari, Fatemeh
    Sharifi, Mohammad Javad
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (01) : 263 - 270
  • [6] Reducing the gate current in vacuum channel field-emission transistors using a finger gate
    Fatemeh Kohani Khoshkbijari
    Mohammad Javad Sharifi
    Journal of Computational Electronics, 2020, 19 : 263 - 270
  • [7] Fabrication and characterization of carbon nanotubes integrated on field-emission diode
    Tsai, J. T. H.
    Li, J. G. S.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (07) : 691 - 693
  • [8] Nickel field-emission microcathode: Art of fabrication, properties, and applications
    Baranova, L. A.
    Baryshev, S. V.
    Gusinskii, G. M.
    Konnikov, S. G.
    Nashchekin, A. V.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (10) : 1686 - 1688
  • [9] Fabrication and electron field-emission of carbon nanofibers grown on silicon nanoporous pillar array
    Wang, Haiyan
    Wang, Yongqiang
    Xue, Renzhong
    Kang, Liping
    Li, Xinjian
    APPLIED SURFACE SCIENCE, 2012, 261 : 219 - 222
  • [10] Fabrication of TaS2 nanobelt arrays and their enhanced field-emission
    Wu, Xing-Cai
    Tao, You-Rong
    Gao, Qi-Xiu
    CHEMICAL COMMUNICATIONS, 2009, (40) : 6008 - 6010
1234