Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

被引：27

作者：

Sorensen, B. S. ^{[1
]}

Aagesen, M. ^{[1
]}

Sorensen, C. B. ^{[1
]}

Lindelof, P. E. ^{[1
]}

Martinez, K. L. ^{[1
]}

Nygard, J. ^{[1
]}

机构：

[1] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen, Denmark

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

关键词：

D O I：

10.1063/1.2821372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the electric properties of p-InAs nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction in InAs nanowires is challenging because of the Fermi-level pinning above the conduction band edge at the nanowire surface that leads to creation of an electron inversion layer. We demonstrate that this task is possible without a modified surface and report a strong temperature dependence (10-10(5)) of the on-off ratio caused by the surface inversion layer. (C) 2008 American Institute of Physics.

引用

页数：3

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