Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

被引：210

作者：

Zhao, Hongping ^{[1
]}

Liu, Guangyu ^{[1
]}

Arif, Ronald A. ^{[1
]}

Tansu, Nelson ^{[1
]}

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 10期

基金：

美国国家科学基金会;

关键词：

III-Nitride; InGaN QWs; Light-emitting diodes; Efficiency-droop; LASERS; LEAKAGE;

D O I：

10.1016/j.sse.2010.05.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k . p method is used to calculate the band structure for InGaN QW. The analysis indicates that the internal quantum efficiency in the conventional 24-angstrom In0.28Ga0.72N-GaN QW structure reaches its peak at low injection current density and reduces gradually with further increase in current due to the large carrier thermionic emission. Structures combining 24-angstrom In0.28Ga0.72N QW with 15-angstrom Al0.1Ga0.9N barriers show slight reduction in quenching of the injection efficiency as current density increases. The use of 15-angstrom Al0.83In0.17N barriers shows significant reduction in efficiency-droop (10% reduction of the internal quantum efficiency at current density of 620 A/cm(2)). Thus, InGaN QWs employing thin layers of larger bandgap AlInN barriers suppress the efficiency-droop phenomenon significantly. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1119 / 1124

页数：6

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