Heavy copper wire-bonding on silicon chips with aluminum-passivated Cu bond-pads

被引：26

作者：

Gross, David ^{[1
]}

Haag, Sabine ^{[2
]}

Reinold, Manfred ^{[2
]}

Schneider-Ramelow, Martin ^{[3
]}

Lang, Klaus-Dieter ^{[4
]}

机构：

[1] Robert Bosch GmbH, Wernerstr 51, D-70469 Stuttgart, Germany

[2] Robert Bosch GmbH, Robert Bosch Campus 1, D-71272 Renningen, Germany

[3] Fraunhofer IZM, Gustav Meyer Allee 25, D-13355 Berlin, Germany

[4] Tech Univ Berlin, Gustav Meyer Allee 25, D-13355 Berlin, Germany

来源：

MICROELECTRONIC ENGINEERING | 2016年 / 156卷

关键词：

Copper; Wire-bonding; Passivation; Electro-chemical deposition; Aluminum; Cleaning; Oxidation; OXIDATION; FILMS;

D O I：

10.1016/j.mee.2015.12.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thick electroplated Cu bond-pads have recently been shown to allow for heavy Cu wire-bonding on silicon power devices. The Cu surface oxides present on these pads are a major concern for the bonding process and for a sufficiently stable bond formation. They currently have to be removed after the die-attach and prior to wire bonding. To avoid such removal, the application of a thin Al coating on the Cu bond-pads is investigated for its passivating ability and its suitability for the bonding process. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：41 / 45

页数：5

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