Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

被引:34
作者
Alden, D. [1 ,2 ]
Guo, W. [1 ]
Kirste, R. [3 ]
Kaess, F. [1 ]
Bryan, I. [1 ]
Troha, T. [4 ]
Bagal, A. [5 ]
Reddy, P. [1 ]
Hernandez-Balderrama, Luis H. [1 ]
Franke, A. [1 ]
Mita, S. [3 ]
Chang, C. -H. [5 ]
Hoffmann, A. [2 ]
Zgonik, M. [4 ]
Collazo, R. [1 ]
Sitar, Z. [1 ]
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany
[3] Adroit Mat Inc, 2054 Kildaire Farm Rd,Suite 205, Cary, NC 27518 USA
[4] Univ Ljubljana, Fac Math & Phys, Jadranska 19, Ljubljana 1000, Slovenia
[5] N Carolina State Univ, Dept Mech & Aerosp Engn, Raleigh, NC 27695 USA
基金
美国国家科学基金会;
关键词
GENERATION; GROWTH; LIGHT;
D O I
10.1063/1.4955033
中图分类号
O59 [应用物理学];
学科分类号
摘要
Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor deposition growth of AlN in combination with laser interference lithography was developed for making a nanoscale lateral polarity structure (LPS) with domain size down to 600 nm. The Al-polar and N-polar domains were identified by wet etching the periodic LPS in a potassium hydroxide solution and subsequent scanning electron microscopy (SEM) characterization. Fully coalesced and well-defined vertical interfaces between the adjacent domains were established by cross-sectional SEM. AlN LPSs were mechanically polished and surface roughness with a root mean square value of similar to 10 nm over a 90 mu m x 90 mu m area was achieved. 3.8 mu m wide and 650 nm thick AlN LPS waveguides were fabricated. The achieved domain sizes, surface roughness, and waveguides are suitable for second harmonic generation in the UVC spectrum. Published by AIP Publishing.
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页数:5
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