Si nanocrystal memory devices self-assembled by in situ rapid thermal annealing of ultrathin a-Si on SiO2

被引：17

作者：

Chen, Jian-Hao ^{[1
]}

Lei, Tan-Fu

Landheer, Dolf

Wu, Xiaohua

Liu, Jian

Chao, Tien-Sheng

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[4] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 10期

关键词：

D O I：

10.1149/1.2764459

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Si-nanocrystal memories have been fabricated using the thermal agglomeration of an ultrathin (0.9-3.5 nm) amorphous Si (a-Si) film. The a-Si was deposited by electron beam evaporation followed by in situ annealing at 850 C for 5 min. Hemispherical nanocrystals were obtained with a dot density up to 3.9 x 10(11) cm(-2), and a stored charge density of 4.1 x 10(12) cm(-2) (electron + hole) was achieved. The data retention characteristics of nanocrystal-embedded devices have shown a 1 V memory window after 100 h. Well-separated Si nanocrystals with a 23-32% surface-coverage ratio have been successfully demonstrated. The process compatibility of the proposed technique was also discussed. (C) 2007 The Electrochemical Society.

引用

页码：H302 / H304

页数：3

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