43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

被引：0

作者：

Piotrowicz, S. ^{[1
]}

Ouarch, Z. ^{[2
]}

Chartier, E. ^{[1
]}

Aubry, R. ^{[1
]}

Callet, G. ^{[1
,3
]}

Floriot, D. ^{[2
]}

Jacquet, J. C. ^{[1
]}

Jardel, O. ^{[1
]}

Morvan, E. ^{[1
]}

Reveyrand, T. ^{[3
]}

Sarazin, N. ^{[1
]}

Delage, S. L. ^{[1
]}

机构：

[1] ALCATEL THALES III V Lab, Route Nozay, F-91461 Marcoussis, France

[2] United Monolith Semicond, Orsay, France

[3] XLIM, Fac sci Limoges, D-87060 Limoges, France

来源：

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年

关键词：

GaN; HEMT; MMIC; power amplifier; X-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Korrigan project launched by the European Defense Agency. GaN has already demonstrated excellent output power levels, nevertheless demonstration of excellent PAE associated to very high power in MMIC technology is still challenging. In this work, we present State-of-the-Art results on AlGaN/GaN MMIC amplifiers. An output power of 43W with 52% of PAE was achieved at 10.5 GHz showing that high power associated with high PAE can be obtained at X-band using MMIC GaN technology.

引用

页码：505 / 508

页数：4

共 50 条

[31] A Reconfigurable S-/X-band GaN Cascode LNA MMIC
Kobayashi, Kevin W.
Campbell, Charles
Lee, Cathy
Gallagher, Justin
Shust, John
Botelho, Andrew
2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2017,
[32] An X-band high-efficiency GaN load modulated balanced amplifier MMIC
Wang, Guangnian
Tao, Hong-Qi
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2020, 62 (06) : 2195 - 2201
[33] X-BAND MMIC VOLTAGE-CONTROLLED OSCILLATOR USING HEMTS
ALLAMANDO, EA
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1992, 5 (08) : 395 - 398
[34] High-temperature power performance of X-band recessed-gate AlGaN/GaN HEMTs
Lee, C
Saunier, P
Tserng, HQ
2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 177 - 180
[35] An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier
Huang, Li-Hsien
Chiou, Hwann-Kaeo
2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2020, : 257 - 259
[36] X-Band Outphasing GaN MMIC PA with Power Recycling
Litchfield, Michael
Popovic, Zoya
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,
[37] Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications
Florian, Corrado
Cignani, Rafael
Santarelli, Alberto
Filicori, Fabio
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (12) : 4492 - 4504
[38] Experimental Validation of ASM-HEMT Nonlinear Embedding Modeling of GaN HEMTs at X-band
Lindquist, Miles
Roblin, Patrick
Miller, Nicholas C.
Davis, Devin
Gilbert, Ryan
Elliott, Michael
2023 100TH ARFTG MICROWAVE MEASUREMENT CONFERENCE, ARFTG, 2023,
[39] MMIC Class-F power amplifiers using field-plated AlGaN/GaN HEMTs
Gao, Steven
Xu, Hongtao
Mishra, Umesh K.
York, Robert A.
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006, 2006, : 81 - 84
[40] 14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applications
Peng, M. Z.
Zheng, Y. K.
Luo, W. J.
Liu, X. Y.
SOLID-STATE ELECTRONICS, 2011, 64 (01) : 63 - 66

← 1 2 3 4 5 →