43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

被引：0

作者：

Piotrowicz, S. ^{[1
]}

Ouarch, Z. ^{[2
]}

Chartier, E. ^{[1
]}

Aubry, R. ^{[1
]}

Callet, G. ^{[1
,3
]}

Floriot, D. ^{[2
]}

Jacquet, J. C. ^{[1
]}

Jardel, O. ^{[1
]}

Morvan, E. ^{[1
]}

Reveyrand, T. ^{[3
]}

Sarazin, N. ^{[1
]}

Delage, S. L. ^{[1
]}

机构：

[1] ALCATEL THALES III V Lab, Route Nozay, F-91461 Marcoussis, France

[2] United Monolith Semicond, Orsay, France

[3] XLIM, Fac sci Limoges, D-87060 Limoges, France

来源：

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年

关键词：

GaN; HEMT; MMIC; power amplifier; X-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Korrigan project launched by the European Defense Agency. GaN has already demonstrated excellent output power levels, nevertheless demonstration of excellent PAE associated to very high power in MMIC technology is still challenging. In this work, we present State-of-the-Art results on AlGaN/GaN MMIC amplifiers. An output power of 43W with 52% of PAE was achieved at 10.5 GHz showing that high power associated with high PAE can be obtained at X-band using MMIC GaN technology.

引用

页码：505 / 508

页数：4

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