Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height

被引：3

作者：

Doi, Takuma ^{[1
,2
,3
]}

Shibayama, Shigehisa ^{[1
,2
]}

Sakashita, Mitsuo ^{[1
]}

Kojima, Kazutoshi ^{[4
]}

Shimizu, Mitsuaki ^{[3
]}

Nakatsuka, Osamu ^{[1
,2
,5
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Nat Inst Adv Ind Sci & Technol, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648601, Japan

[3] Nagoya Univ, GaN Adv Device Open Innovat Lab, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648601, Japan

[4] Natl Inst Adv Ind Sci & Technol, Cent 2, Adv Power Elect Res Ctr, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[5] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 01期

关键词：

4H-SiC; ohmic contact; Schottky barrier height; contact resistivity; interface; power device; surface treatment; SILICON-CARBIDE; SEMICONDUCTOR; MECHANISM; MODEL;

D O I：

10.35848/1882-0786/ac407f

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type 4H-SiC interface to low-temperature annealing. Our results revealed that annealing at 200 degrees C reduced SBH; a low SBH of 0.28 eV was obtained on the lightly doped substrate. Atomic force microscopy measurements revealed negligible increase in the surface roughness after Mg deposition and annealing. Using the low-temperature process, a contact resistivity of 6.5 x 10(-5) omega center dot cm(2) was obtained on the heavily doped substrate, which is comparable to Ni/4H-SiC subjected to annealing of above 950 degrees C.

引用

页数：4

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