Observation of crossover from intraband to interband nonlinear terahertz optics

被引：24

作者：

Chai, X. ^{[1
]}

Ropagnol, X. ^{[1
,2
]}

Ovchinnikov, A. ^{[3
]}

Chefonov, O. ^{[3
]}

Ushakov, A. ^{[4
]}

Garcia-Rosas, C. M. ^{[1
,5
]}

Isgandarov, E. ^{[1
]}

Agranat, M. ^{[3
]}

Ozaki, T. ^{[1
]}

Savel'ev, A. ^{[3
,4
]}

机构：

[1] INRS, EMT, Adv Laser Light Source, Varennes, PQ J3X 1S2, Canada

[2] Ecole Technol Super, Elect Engn Dept, Montreal, PQ H3C 1K3, Canada

[3] Russian Acad Sci, Joint Inst High Temp, Izhorskava 13,Bd 2, Moscow 125412, Russia

[4] Lomonosov Moscow State Univ, Moscow 119991, Russia

[5] Univ Nacl Autonoma Mexico, Fac Ciencias, Dept Fis, Ciudad Univ, Mexico City 04510, DF, Mexico

来源：

OPTICS LETTERS | 2018年 / 43卷 / 21期

基金：

加拿大自然科学与工程研究理事会; 俄罗斯科学基金会;

关键词：

IMPACT IONIZATION; THZ PULSES; SEMICONDUCTORS; IN0.53GA0.47AS; GENERATION; DSTMS; LASER;

D O I：

10.1364/OL.43.005463

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this Letter, we investigate the nonlinear effects of extremely intense few-cycle terahertz (THz) pulses (generated from the organic crystal 4-NN, NN-dimethylamino-4'4'-N'N'-methyl-stilbazolium 2, 4, 6 trimethylbenzenesul-fonate, with peak electrical fields of a few MV/cm) on the carrier dynamics in n-doped semiconductor thin film In0.53Ga0.47As. By performing open-aperture Z-scan measurements and recording the transmitted THz energy through semiconductor sample, we observed a strong THz absorption bleaching effect at high fields, followed by an absorption enhancement at even higher fields. We attribute our observations to a crossover from pure intraband carrier dynamics to an interplay between intraband carrier heating and interband carrier generations. (C) 2018 Optical Society of America

引用

页码：5463 / 5466

页数：4

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