Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy

被引:60
作者
Choi, Yun [1 ]
Kim, Keunui [1 ]
Lim, Soo Yeon [1 ]
Kim, Jungcheol [1 ]
Park, Je Myoung [1 ]
Kim, Jung Hwa [2 ]
Lee, Zonghoon [2 ,3 ]
Cheong, Hyeonsik [1 ]
机构
[1] Sogang Univ, Dept Phys, Seoul 04107, South Korea
[2] Ulsan Natl Inst Sci & Technol, Sch Mat Sci & Engn, Ulsan 44919, South Korea
[3] IBS, Ctr Multidimens Carbon Mat, Ulsan 44919, South Korea
基金
新加坡国家研究基金会;
关键词
FEW-LAYER RES2; ATOMICALLY THIN; CRYSTAL-STRUCTURE; PHASE DIFFERENCE; RHENIUM; TRANSITION; DEPENDENCE; SCATTERING; SEMICONDUCTOR; ANISOTROPY;
D O I
10.1039/c9nh00487d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Polarized Raman spectroscopy on few-layer ReS2 and ReSe2 was carried out to determine the crystallographic orientations. Since monolayer ReX2 (X = S or Se) has a distorted trigonal structure with only an inversion center, there is in-plane anisotropy and the two faces of a monolayer crystal are not equivalent. Since many physical properties vary sensitively depending on the crystallographic orientation, it is important to develop a reliable method to determine the crystal axes of ReX2. By comparing the relative polarization dependences of some representative Raman modes measured with three different excitation laser energies with high-resolution scanning transmission electron microscopy, we established a reliable procedure to determine all three principal directions of few-layer ReX2, including a way to distinguish the two types of faces: a 2.41 eV laser for ReS2 or a 1.96 eV laser for ReSe2 should be chosen as the excitation source of polarized Raman measurements; then the relative directions of the maximum intensity polarization of the Raman modes at 151 and 212 cm(-1) (124 and 161 cm(-1)) of ReS2 (ReSe2) can be used to determine the face types and the Re-chain direction unambiguously.
引用
收藏
页码:308 / 315
页数:8
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