Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films

被引:113
|
作者
Pertsev, NA
Contreras, JR
Kukhar, VG
Hermanns, B
Kohlstedt, H
Waser, R
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1063/1.1621731
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization reversal in single-crystalline ferroelectric films has been investigated experimentally and theoretically. The hysteresis loops were measured for Pb(Zr0.52Ti0.48)O-3 films with thicknesses ranging from 8 to 250 nm. These films were grown epitaxially on SrRuO3 bottom electrodes deposited on SrTiO3 substrates. The measurements using Pt top electrodes showed that the coercive field E-c increases drastically as the film becomes thinner, reaching values as high as E(c)approximate to1200 kV/cm. To understand this observation, we calculated the thermodynamic coercive field E-th of a ferroelectric film as a function of the misfit strain S-m in an epitaxial system and showed that E-th strongly depends on S-m. However, the coercive field of ultrathin films, when measured at high frequencies, exceeds the calculated thermodynamic limit. Since this is impossible for an intrinsic coercive field E-c, we conclude that measurements give an apparent E-c rather than the intrinsic one. An enormous increase of apparent coercive field in ultrathin films may be explained by the presence of a conductive nonferroelectric interface layer. (C) 2003 American Institute of Physics.
引用
收藏
页码:3356 / 3358
页数:3
相关论文
共 50 条
  • [1] Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
    Liu, Q.
    Marconot, O.
    Piquemal, M.
    Eypert, C.
    Borowiak, A. S.
    Baboux, N.
    Gautier, B.
    Benamrouche, A.
    Rojo-Romeo, P.
    Robach, Y.
    Penuelas, J.
    Vilquin, B.
    THIN SOLID FILMS, 2014, 553 : 85 - 88
  • [2] Growth model of epitaxial Pb(Zr0.52Ti0.48)O3 nanoislands
    Chu, MW
    Szafraniak, I
    Scholz, R
    Hesse, D
    Alexe, M
    Gösele, U
    FERROELECTRIC THIN FILMS XII, 2004, 784 : 9 - 12
  • [3] Preparation and study on epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric films on different substrates
    Li, JK
    Yao, X
    ACTA PHYSICA SINICA, 2005, 54 (06) : 2938 - 2944
  • [4] Effect of LaNiO3 interlayer on electrical properties of Pb(Zr0.52Ti0.48)O3/LaNiO3/Pb(Zr0.52Ti0.48)O3 composite films
    Zhang, Fan
    Lv, Yang
    Shao, Yan
    Bai, Yu
    Li, Yi Zhuo
    Wang, Chao
    Wang, Zhan Jie
    VACUUM, 2021, 189
  • [5] Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film
    Han, Guifang
    Ryu, Jungho
    Yoon, Woon-Ha
    Choi, Jong-Jin
    Hahn, Byung-Dong
    Kim, Jong-Woo
    Park, Dong-Soo
    Ahn, Cheol-Woo
    Priya, Shashank
    Jeong, Dae-Yong
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
  • [6] REVERSIBLE PYROELECTRIC AND PHOTOGALVANIC CURRENT IN EPITAXIAL PB(ZR0.52TI0.48)O3 THIN-FILMS
    LEE, J
    ESAYAN, S
    PROHASKA, J
    SAFARI, A
    APPLIED PHYSICS LETTERS, 1994, 64 (03) : 294 - 296
  • [7] Dynamic hysteresis of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films
    Liu, JM
    Yu, LC
    Yuan, GL
    Yang, Y
    Chan, HLW
    Liu, ZG
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 798 - 805
  • [8] Engineering of Grain Boundary in Pb(Zr0.52Ti0.48)O3 Epitaxial Films for Tunable Piezoelectric Properties
    Fan, Lisha
    Wang, Yongji
    Wu, Ling
    Zhang, Shuowen
    Zhao, Tianzhen
    Wang, Tingbin
    Ran, Lei
    Tofil, Szymon
    Song, Qiwei
    Pan, Jun
    Yao, Jianhua
    Wu, Huaping
    JOURNAL OF PHYSICAL CHEMISTRY C, 2025, 129 (09): : 4664 - 4672
  • [9] Fatigue and refresh characteristics of Pb(Zr0.52Ti0.48)O3 thin films
    Chae, BG
    Lee, SJ
    Yang, YS
    Kim, SH
    Jang, MS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 31 (06) : 874 - 878
  • [10] Low symmetry phase in Pb(Zr0.52Ti0.48)O3 epitaxial thin films with enhanced ferroelectric properties
    Yan, Li
    Li, Jiefang
    Cao, Hu
    Viehland, D.
    APPLIED PHYSICS LETTERS, 2006, 89 (26)