Multiple epitaxial lift-off of stacked GaAs solar cells for low-cost photovoltaic applications

被引:7
作者
Shoji, Yasushi [1 ]
Makita, Kikuo [1 ]
Sugaya, Takeyoshi [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
关键词
III-V solar cells; epitaxial lift-off; molecular beam epitaxy; LATERAL ETCH RATE; HIGH-EFFICIENCY; LIFETIME;
D O I
10.35848/1347-4065/ab8575
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents a multilayer peeling from a stacked cell structure as an approach for the cost reduction of III-V solar cells. We demonstrate the separation of two-layer stacked GaAs solar cells with Al(Ga)As release layers on the GaAs substrate into individual layers without cracks. The cells in each layer peeled from the stacked structure show equivalent device performances. Thermal cycling tests with repeated heating to 85 degrees C and cooling to -40 degrees C show that the flexible GaAs thin-film cell exhibits a high durability against temperature changes. Further, a damp heat test conducted at 85 degrees C and 85% humidity indicates that the cell has long-term stability. These results suggest that the flexible GaAs thin-film cells fabricated by peeling from stacked structures have a high reliability and prove that the separation of the stacked cell structures into individual layers is effective in fabricating low-cost III-V solar cells.
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页数:6
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