Near-infrared Photodetection in Graphene/β-In2Se3 Heterostructure

被引：0
|
作者：
Shao, Wen [1 ,2 ]
Xie, Xiaoping [1 ,2 ]
Zheng, Yunqiang [1 ]
Wang, Wei [1 ]
Li, Tiantian [1 ,3 ]
Wang, Feifan [3 ]
Wang, Yong [4 ]
Law, Stephanie [4 ]
Gu, Tingyi [3 ]
机构：
[1] Chinese Acad Sci, Xian Inst Opt & Precis Mech XIOPM, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China
[2] Univ Chinese Acad Sci UCAS, Beijing 100049, Peoples R China
[3] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
[4] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
来源：
2020 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) AND INTERNATIONAL CONFERENCE ON INFORMATION PHOTONICS AND OPTICAL COMMUNICATIONS (IPOC) | 2020年
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D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Photoresponsivity of 1.17 A/W is observed in graphene/molecular beam epitaxy grown beta-state In2Se3 photodetector at 1550 nm light excitation and 0.35 V bias, with smaller than 2 ms response time. (C) 2020 The Author(s)
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页数：3
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