Vacuum Phonon Tunneling

被引：62
作者：
Altfeder, Igor [1 ]
Voevodin, Andrey A. [1 ]
Roy, Ajit K. [1 ]
机构：
[1] USAF, Res Lab, Thermal Sci & Mat Branch, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
来源：
PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 16期
关键词：
ELECTRON; SPECTROSCOPY; CONDUCTANCE; MICROSCOPY; SURFACE; HEAT;
D O I：
10.1103/PhysRevLett.105.166101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.
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页数：4
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