Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector

被引：4
作者：
Li, T
Carrano, JC
Eiting, CJ
Grudowski, PA
Lambert, DJH
Kwon, HK
Dupuis, RD
Campbell, JC
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA
[2] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[3] USA, Res Lab, Adelphi, MD USA
来源：
FIBER AND INTEGRATED OPTICS | 2001年 / 20卷 / 02期
关键词：
ultraviolet photodetector; resonant cavity; III-V nitrides; Bragg reflector; interface roughness;
D O I：
10.1080/01468030151076026
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A resonant-cavity-enhanced p-i-n photodetector has been designed and analyzed to operate at a wavelength of 360 nm based on the AlxGa1-xN material system. The novel approach has been adopted of using epitaxial AlN/AlxGa1-xN quarter-wave stacks as the distributed Bragg reflector that serves as the front mirror. An AlxGa1-xN absorptive filter layer is incorporated in suppress all but one resonant mode to ensure single, narrow-band operation. This device structure is projected to achieve wavelength selective, high speed, and high quantum efficiency operation in the ultraviolet. MOCVD-grown 6 1/2-pair AlN/AlxGa1-xN Bragg reflectors with peak reflectivities of similar to 57% have been demonstrated The spectral reflectivity data are found to be in agreement with results of S-matrix simulations with scattering due to interface roughness taken into account.
引用
收藏
页码：125 / 131
页数：7
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