650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes

被引:7
作者
Chang, SJ [1 ]
Chang, CS [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 6A期
关键词
AlGaInP; compressive strain; MQW; LED; POF;
D O I
10.1143/JJAP.37.L653
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer? we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.
引用
收藏
页码:L653 / L655
页数:3
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