JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1998年
/
37卷
/
6A期
关键词:
AlGaInP;
compressive strain;
MQW;
LED;
POF;
D O I:
10.1143/JJAP.37.L653
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer? we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.