Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

被引：104
作者：
Zhu, B. L. [1 ]
Zhao, X. Z. [2 ]
Su, F. H. [3 ]
Li, G. H. [3 ]
Wu, X. G. [3 ]
Wu, J. [1 ]
Wu, R. [1 ]
机构：
[1] Wuhan Univ Sci & Technol, Sch Met & Mat, Dept Met Mat Engn, Wuhan 430081, Peoples R China
[2] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
VACUUM | 2010年 / 84卷 / 11期
基金：
中国博士后科学基金;
关键词：
ZnO; Pulsed laser deposition (PLD); Annealing treatment; Photoluminescence (PL); THIN-FILMS; SUBSTRATE-TEMPERATURE; OXYGEN-PRESSURE; ELECTRICAL-PROPERTIES; EMISSION;
D O I：
10.1016/j.vacuum.2010.01.059
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1280 / 1286
页数：7
相关论文
共 36 条
[31]   The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition [J].
Zhu, B. L. ;
Sun, X. H. ;
Zha, X. Z. ;
Su, F. H. ;
Li, G. H. ;
Wu, X. G. ;
Wu, J. ;
Wu, R. ;
Liu, J. .
VACUUM, 2008, 82 (05) :495-500
[32]   Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition [J].
Zhu, Bai Lin ;
Zhao, Xing Zhong ;
Xu, Sheng ;
Su, Fu Hai ;
Li, Guo Hua ;
Wu, Xiao Guang ;
Wu, Jun ;
Wu, Run ;
Liu, Jing .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) :2225-2229
[33]   Effect of thickness on the structure and properties of ZnO thin films prepared by pulsed laser deposition [J].
Zhu, Bai Lin ;
Sun, Xiao Hua ;
Guo, Shi Shang ;
Zhao, Xing Zhong ;
Wu, Juan ;
Wu, Run ;
Liu, Jing .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A) :7860-7865
[34]   Influence of Sb, In and Bi dopants on the response of ZnO thick films to VOCs [J].
Zhu, BL ;
Xie, CS ;
Wu, J ;
Zeng, DW ;
Wang, AH ;
Zhao, XZ .
MATERIALS CHEMISTRY AND PHYSICS, 2006, 96 (2-3) :459-465
[35]   Synthesis and gas sensitivity of In-doped ZnO nanoparticles [J].
Zhu, BL ;
Zeng, DW ;
Wu, J ;
Song, WL ;
Xie, CS .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (08) :521-526
[36]   Optical properties of ZnO thin film on γ-LiAlO2 substrate grown by pulsed laser deposition [J].
Zou, J ;
Zhou, SM ;
Xia, CT ;
Zhang, X ;
Su, FL ;
Peng, GL ;
Li, XM ;
Xu, J .
THIN SOLID FILMS, 2006, 496 (02) :205-207
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