Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

被引:63
作者
Khan, Mohammed Zahed Mustafa [1 ]
Ng, Tien Khee [1 ]
Ooi, Boon S. [1 ]
机构
[1] King Abdullah Univ Sci & Technol, Photon Lab, Comp Elect & Math Sci & Engn CEMSE Div, Thuwal 239556900, Saudi Arabia
关键词
Quantum dots; Quantum dash; Laser diode; Superluminescent diode; Mode locked laser; Broad gain; 1.55; MU-M; OPTICAL CLOCK RECOVERY; FABRY-PEROT LASER; ROOM-TEMPERATURE OPERATION; CROSS-GAIN MODULATION; MODE-LOCKED LASERS; SUBPICOSECOND PULSE GENERATION; LINEWIDTH ENHANCEMENT FACTOR; THRESHOLD CURRENT-DENSITY; CONTINUOUS-WAVE OPERATION;
D O I
10.1016/j.pquantelec.2014.11.001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (OD) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi OD quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the 1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:237 / 313
页数:77
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