Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy

被引：0

作者：

Shen, C. -H. ^{[1
]}

Chen, H. -Y. ^{[1
]}

Lin, H. -W. ^{[1
]}

Wu, C. -Y. ^{[1
]}

Gwo, S. ^{[1
]}

Klochikhin, A. A. ^{[2
]}

Davydov, V. Yu. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[2] Ioffe Physico Tech Inst, St Petersburg RU-94021, Russia

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674900

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

report the unusual photoluminescence (PL) properties of vertically aligned InN nanorod arrays grown on Si(111) with a Si3N4 buffer layer. The optimum growth conditions of InN nanorods are obtained by controlling the III/V ratio and the growth temperature. Structural characterization by X-ray diffraction and scanning electron microscopy indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c-axis. Near-infrared PL from InN nanorods is clearly observed at room temperature. However, in comparison to the PL from InN epitaxial films, the PL from InN nanorods is significantly lower in efficiency and exhibit anomalous temperature dependence. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effect. (c) 2007 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.

引用

页码：2465 / +

页数：2

共 17 条

[1] Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations [J].