Building Structures Atom by Atom via Electron Beam Manipulation

被引:86
作者
Dyck, Ondrej [1 ,2 ]
Kim, Songkil [3 ]
Jimenez-Izal, Elisa [4 ,5 ,6 ]
Alexandrova, Anastassia N. [5 ,6 ,7 ]
Kalinin, Sergei V. [1 ,2 ]
Jesse, Stephen [1 ,2 ]
机构
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Inst Funct Imaging Mat, Oak Ridge, TN 37831 USA
[3] Pusan Natl Univ, Sch Mech Engn, Busan 46241, South Korea
[4] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
[5] Euskal Herriko Unibertsitatea UPV EHU, Kimika Fak, PK 1072, Donostia San Sebastian 20080, Euskadi, Spain
[6] DIPC, PK 1072, Donostia San Sebastian 20080, Euskadi, Spain
[7] Calif NanoSyst Inst, 570 Westwood Plaza,Bldg 114, Los Angeles, CA 90095 USA
关键词
atomic control; electron beam; graphene; scanning transmission electron microscope; silicon dimer; NITROGEN-DOPED GRAPHENE; SINGLE ATOMS; DYNAMICS; FABRICATION; STABILITY; DEFECTS; DAMAGE; LEVEL;
D O I
10.1002/smll.201801771
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Building materials from the atom up is the pinnacle of materials fabrication. Until recently the only platform that offered single-atom manipulation was scanning tunneling microscopy. Here controlled manipulation and assembly of a few atom structures are demonstrated by bringing together single atoms using a scanning transmission electron microscope. An atomically focused electron beam is used to introduce Si substitutional defects and defect clusters in graphene with spatial control of a few nanometers and enable controlled motion of Si atoms. The Si substitutional defects are then further manipulated to form dimers, trimers, and more complex structures. The dynamics of a beam-induced atomic-scale chemical process is captured in a time-series of images at atomic resolution. These studies suggest that control of the e-beam-induced local processes offers the next step toward atom-by-atom nanofabrication, providing an enabling tool for the study of atomic-scale chemistry in 2D materials and fabrication of predefined structures and defects with atomic specificity.
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页数:9
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