Development of ultra-high-current implanter for material modification process in next era devices

被引：4

作者：

Kai, Hiroaki ^{[1
]}

Uchida, Yuya ^{[1
]}

Kurauchi, Taido ^{[1
]}

Tajiyoshi, Masahide ^{[1
]}

Takashima, Daiki ^{[1
]}

Nishimoto, Hitomi ^{[1
]}

Oshurahunov, Azamat ^{[1
]}

Igarashi, Yoshiro ^{[1
]}

Wada, Ryota ^{[1
]}

Kawakami, Naoyuki ^{[1
]}

Kuroi, Takashi ^{[1
]}

Sasaki, Junji ^{[1
]}

Hamamoto, Nariaki ^{[1
]}

Hahto, Sami K. ^{[2
]}

Sacco, George ^{[2
]}

Matsumoto, Takeshi ^{[2
]}

机构：

[1] NISSIN ION EQUIPMENT CO LTD, 29 Minakuchi Cho, Koka, Shiga, Japan

[2] NISSIN ION EQUIPMENT USA, 34 Sulivan Roade Suite 21, N Billerica, MA 01862 USA

来源：

MRS ADVANCES | 2022年 / 7卷 / 36期

关键词：

ION-IMPLANTATION;

D O I：

10.1557/s43580-022-00452-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed novel low-energy ultra-high-current implanter for material modification process. The tool features largesheet beam which can realize extremely high-beam transport efficiency and was adopted in our high- current ion implanter " LUXiON." Both the ion source and the beamline were fully optimized to obtain the high-current ion beam at a relatively low-energy region. The over 40 mA boron beam current was recorded at energy of 1 keV. This corresponds to 42 wafers per hour throughput at the condition of 1E16 ions/cm(2) dose. It should be noted that 1E16 ions/cm(2) implantation can be utilized in the semiconductor fabrication step from the viewpoint of productivity. We also evaluated the material modification of SiO2 films by using this tool. The rate for wet and dry etch can be controlled by selecting the ion species and implantation dose. This tool would contribute to the manufacturing of high-performance semiconductor devices by providing a novel implantation capability.

引用

页码：1248 / 1252

页数：5

共 8 条

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